PIC16F688 Datasheet, PDF (141/174 Pages) Microchip Technology – 14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F688
14.3 DC Characteristics: PIC16F688-I (Industrial)
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
Param
No.
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020 Power-down Base
Current (IPD)⁽⁴⁾
— 0.99 TBD nA
— 1.2 TBD nA
2.0 WDT, BOD, Comparators, VREF and
3.0 ^{T1OSC disabled}
— 2.9 TBD nA
5.0
D021
— 0.3 TBD µA
2.0 WDT Current
— 1.8 TBD µA
3.0
— 8.4 TBD µA
5.0
D022
—
58 TBD µA
3.0 BOD Current
D023
— 109 TBD µA
— 3.3 TBD µA
5.0
2.0 Comparator Current⁽³⁾
— 6.1 TBD µA
3.0
— 11.5 TBD µA
5.0
D024
—
58 TBD µA
2.0 CVREF Current
—
85 TBD µA
3.0
— 138 TBD µA
5.0
D025
— 4.0 TBD µA
2.0 T1OSC Current
— 4.6 TBD µA
3.0
— 6.0 TBD µA
5.0
D026
— 1.2 TBD nA
3.0 A/D Current
— 0.0022 TBD µA
5.0
Legend: TBD = To Be Determined
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral ∆ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in hi-impedance state and tied to VDD.
 2004 Microchip Technology Inc.
Preliminary
DS41203B-page 139