PIC16F688 Datasheet, PDF (143/174 Pages) Microchip Technology – 14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F688
14.5 DC Characteristics: PIC16F688-E (Extended)
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min
Typ† Max Units
VDD
Conditions
Note
D020E Power-down Base
Current (IPD)⁽⁴⁾
— 0.00099 TBD µA
— 0.0012 TBD µA
2.0 WDT, BOD, Comparators, VREF
3.0 ^{and T1OSC disabled}
— 0.0029 TBD µA
5.0
D021E
—
0.3 TBD µA
2.0 WDT Current
—
1.8 TBD µA
3.0
—
8.4 TBD µA
5.0
D022E
—
58 TBD µA
3.0 BOD Current
D023E
— 109 TBD µA
5.0
—
3.3 TBD µA
2.0 Comparator Current⁽³⁾
—
6.1 TBD µA
3.0
— 11.5 TBD µA
5.0
D024E
—
58 TBD µA
2.0 CVREF Current
—
85 TBD µA
3.0
— 138 TBD µA
5.0
D025E
—
4.0 TBD µA
2.0 T1OSC Current
—
4.6 TBD µA
3.0
D026E
—
6.0 TBD µA
— 0.0012 TBD µA
5.0
3.0 A/D Current⁽³⁾
— 0.0022 TBD µA
5.0
Legend: TBD = To Be Determined
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral ∆ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
 2004 Microchip Technology Inc.
Preliminary
DS41203B-page 141