HYB25D128160CT Datasheet, PDF (42/85 Pages) Infineon Technologies AG – 128 Mbit Double Data Rate SDRAM

HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
CK
CK
Command
Address
DQS
DQ
DM
T1
T2
T3
Write
NOP
BAa, COL b
t_DQSS (max)
DI a-b
NOP
T4
Write
BAa, COL n
DI a-b, etc. = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
T5
NOP
DI a-n
Don’t Care
Figure 20 Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4)
Data Sheet
42
Rev. 1.0, 2004-04