TC1762 Datasheet, PDF (112/114 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller TriCore

TC1762
Preliminary
Packaging
5.3
Flash Memory Parameters
The data retention time of the TC1762’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Table 5-2 Flash Parameters
Parameter
Symbol Limit Values Unit Notes
Min.
Max.
Program Flash
t_RET
20
Retention Time,
Physical Sector^{1) 2)}
–
years Max. 1000
erase/program cycles
Program Flash
Retention Time,
Logical Sector¹⁾²⁾
t_RETL
20
–
years Max. 50
erase/program cycles
Data Flash Endurance N_E
(32 Kbyte)
15 000 –
–
Max. data retention
time 5 years
Data Flash Endurance, N_E8
EEPROM Emulation
(8 × 4 Kbyte)
120 000 –
–
Max. data retention
time 5 years
Programming Time per t_PR
–
Page³⁾
5
ms –
Program Flash Erase t_ERP
–
Time per 256-Kbyte
sector
5
s
f_CPU = 80 MHz
Data Flash Erase Time t_ERD
–
per 16-Kbyte sector
0.625 s
f_CPU = 80 MHz
Wake-up time
t_WU
4300 × 1/f_CPU + 40µs
1) Storage and inactive time included.
2) At average weighted junction temperature T_J = 100 °C, or
the retention time at average weighted temperature of T_J = 110 °C is minimum 10 years, or
the retention time at average weighted temperature of T_J = 150 °C is minimum 0.7 years.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5ms.
Data Sheet
108
V1.0, 2008-04