IC-JX_16 Datasheet, PDF (10/48 Pages) IC-Haus GmbH – 16-FOLD 24 V HIGH-SIDE DRIVER

iC-JX
16-FOLD 24 V HIGH-SIDE DRIVER WITH µC INTERFACE
Rev C2, Page 10/48
ELECTRICAL CHARACTERISTICS
Operating conditions: VCC = VDD = 3 ... 5.5 V, VBy = 12 ... 36 V, GNDA = GNDD = 0 V, RSET = 10 kΩ ±1% . All inputs on defined logic
states (high or low), Tj = -40 ... 125 °C unless otherwise stated. Functionality and parameters beyond operating conditions (for example w.r.
to independent voltage supplies) are to be verified within the individual application by FMEA methods.
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
740 DR3_IO,0
Relative value using VR3 range
(internal reference)
SELAD = ’0b100’, EME = ’0b0’, SVREF = 0;
DR3_IO,0 = D3_IO,0(V) / D3_IO,0
V(IOx) = 0.3V
V(IOx) = 0.1V
48
50
52
%
14.5 16 18.5 %
741 D4_IO,0
Digital value using VR4 range
(internal reference)
SELAD = ’0b100’, EME = ’0b1’, SVREF = 0,
V(IOx) = 5.0V
790 840 1022
742 DR4_IO,0
Relative value using VR4 range
(internal reference)
SELAD = ’0b100’, EME = ’0b1’, SVREF = 0;
DR4_IO,0 = D4_IO,0(V) / D4_IO,0
V(IOx) = 2.5V
V(IOx) = 0.6V
48
50
52
%
9.5 11.5 14
%
743 D5_IO,0
Digital value using VR5 range
(internal reference)
SELAD = ’0b011’, SVREF = 0
V(IOx) = 36.0V
810 870 1022
744 DR5_IO,0
Relative value using VR5 range
(internal reference)
SELAD = ’0b011’, SVREF = 0;
DR5_IO,0 = D5_IO,0(V) / D5_IO,0
V(IOx) = 24.0V
V(IOx) = 5.0V
64.6 66.6 68.6 %
11.8 13.8 15.8 %
745 DC_IO,0
Digital value of current measure- SELAD = ’0b001’, SVREF = 0, I(IOx) = 150mA 720 820 1022
ment (internal reference)
746 DRC_IO,0
Relative value of current
SELAD = ’0b001’, SVREF = 0;
measurement (internal reference) DRC_IO,0 = DC_IO,0(I) / DC_IO,0
I(IOx) = 75mA
I(IOx) = 15mA
48
51
54
%
6.2 9.2 12.2 %
747 Vrefad
Internal reference voltage for
A/D-Converter
SVREF = 0
2.6 2.75 3.0
V
748 Vref
Optional external reference volt- SVREF = 1
age for A/D-Converter at VREF
2.45 2.5 2.55
V
749 Ivref()
Current in VREF
SVREF = 1, SELAD ≥ ’0b010’
210 300 uA
Input RSET
B01 V(RSET) Voltage at RSET
1.15 1.22 1.30
V
B02 R(RSET) Range value for RSET
9
10
14
kΩ
Burst-Indication
C01 VSPon
Input On-Threshold for burst
recognition
1.3
2.9
V
C02 VSPoff
Input Off-Threshold for
Burst-recognition
1.4
3
V
C03 tpoff
Delay time to Reset after spike at Spike duration: 10 ns
VCC, VDD
2
110
µs
Pin monitoring GNDA, GNDD
H01 Vt()gnd
Threshold voltage for open circuit
detection on pins GNDA, GNDD
35
65
mV
H02 tmin()gnd Minimum duration for open circuit V(GNDA,GNDD) = 0 V ... Vt()gnd
1
µs
detection
H03 tpoff
Delay time to reset after open
circuit detection at GNDA, GNDD
15
µs
Undervoltage detection VBy (y=1..4)
I01 VByon
Undervoltage message VB1...4
on
10.6 11.2 11.8
V
I02 VByoff
Undervoltage message VB1...4
off
10.0 10.6 11.2
V
I03 VByhys Hysteresis
VByhys = VByon - VByoff
400
mV
I04 tmin()lv
Minimum duration for Power-
Down detection
VBy = 0.8 V ... VByoff
1
µs
I05 tpoff
Delay time for undervoltage
message VB1...4
6
µs