GMS84512 Datasheet, PDF (119/123 Pages) Hynix Semiconductor – 8-BIT SINGLE CHIP MICROCOMPUTER

GMS84512T/GMS84524T EPROM PROGRAMMING
5. DEVICE OPERATION MODE
(T_A = 25°C ± 5°C)
Mode
CE
OE
A0~A15
VPP
Read
X
X
VDD
Output Disable
VIH
VIH
X
VDD
Programming
VIL
VIH
X
VPP
Program Verify
X
X
VPP
NOTES:
1. X = Either VIL or VIH
2. See DC Characteristics Table for VDD and VPP voltages during programming.
VDD
5.0V
5.0V
VDD
VDD
O0~O7
DOUT
Hi-Z
DIN
DOUT
6. DC CHARACTERISTICS
(V_SS=0 V, T_A = 25°C ± 5°C)
Symbol
VPP
VDD(1)
IPP ⁽²⁾
IDD ⁽²⁾
VIH
VIL
VOH
VOL
IIL
NOTES:
Item
Intelligent Programming
Intelligent Programming
VPP supply current
VDD supply current
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Min
12.0
Typ
-
Max
13.0
Unit
V
5.75
-
6.25
V
0.8 VDD
VDD-1.0
50
mA
30
mA
V
0.2 VDD
V
V
0.4
V
5
uA
1. VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. The maximum current value is with outputs O0 to O7 unloaded.
Test condition
CE=VIL
IOH = -2.5 mA
IOL = 2.1 mA
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