MB85RQ4MLPF-G Datasheet, PDF (26/36 Pages) Fujitsu Component Limited. – 4 M (512 K × 8) Bit Quad SPI

MB85RQ4ML
■ POWER ON/OFF SEQUENCE
tpd
tf
VDD
VDD (Min)
VIH (Min)
tr
tpu
VDD
VDD (Min)
VIH (Min)
1.0 V
VIL (Max)
1.0 V
VIL (Max)
GND
CS
CS >VDD  0.8 ^
* : CS (Max) < VDD + 0.3 V
CS : don't care
CS >VDD  0.8 ^
CS
GND
Parameter
CS level hold time at power OFF
CS level hold time at power ON
Power supply rising time
Power supply falling time
Symbol
tpd
tpu
tr
tf
Value
Min
Max
400
⎯
250
⎯
0.05
⎯
0.1
⎯
Unit
ns
μs
ms/V
ms/V
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Parameter
Value
Unit
Min Max
Remarks
Read/Write Endurance^*1 10¹³
⎯
10
⎯
Data Retention*²
95
⎯
≥ 200 ⎯
Times/byte
Years
Operation Ambient Temperature TA = + 85 °C
Operation Ambient Temperature TA = + 85 °C
Operation Ambient Temperature TA = + 55 °C
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2: Minimum values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
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DS501-00043-2v0-E