MB85RQ4MLPF-G Datasheet, PDF (22/36 Pages) Fujitsu Component Limited. – 4 M (512 K × 8) Bit Quad SPI

MB85RQ4ML
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
0 ≤ CS< VDD
⎯
⎯
200
Input leakage current
|ILI|
CS = VDD
⎯
⎯
WP, HOLD, SCK,
SI = 0 V to VDD
⎯
⎯
1
μA
1
Output leakage current
|ILO|
SO = 0 V to VDD
⎯
⎯
1
μA
SCK = 20 MHz
(SPI)
⎯
1.3
⎯
mA
SCK = 40 MHz
(SPI)
⎯
2.6
⎯
mA
SCK = 108 MHz
(SPI)
⎯
6.8
15
mA
Operating power supply current IDD
SCK = 20 MHz
(Quad SPI)
⎯
3.6
⎯
mA
SCK = 40 MHz
(Quad SPI)
⎯
7.4
⎯
mA
SCK = 108 MHz
(Quad SPI)
⎯
20.0
30
mA
Standby current
ISB
SCK = SI = CS = WP
= HOLD = VDD
⎯
70
400
μA
Input high voltage
VIH VDD = 1.7 V to 1.95 V VDD × 0.8
⎯
VDD + 0.3 V
Input low voltage
VIL VDD = 1.7 V to 1.95 V − 0.5
⎯
VDD × 0.2 V
Output high voltage
VOH
IOH = − 2 mA
VDD − 0.5
⎯
⎯
V
Output low voltage
VOL
IOL = 2 mA
⎯
⎯
0.4
V
Pull up resistance for CS
RP
⎯
18
33
80
kΩ
22
DS501-00043-2v0-E