K20P144M120SF3 Datasheet, PDF (35/80 Pages) Freescale Semiconductor, Inc – K20 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 20. Flash command timing specifications (continued)
Symbol Description
16-bit write to FlexRAM execution time:
t_eewr16b64k
t_eewr16b128k
t_eewr16b256k
t_eewr16b512k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 512 KB EEPROM backup
t_eewr32bers 32-bit write to erased FlexRAM location
execution time
t_eewr32b64k 32-bit-write to FlexRAM execution time:
t_eewr32b128k
• 64 KB EEPROM backup
t_eewr32b256k
t_eewr32b512k
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 512 KB EEPROM backup
Min.
—
—
—
—
—
Typ.
TBD
TBD
TBD
TBD
200
Max.
TBD
TBD
TBD
TBD
TBD
Unit
Notes
ms
ms
ms
ms
μs
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
TBD
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFE) current and power specfications
Table 21. Flash (FTFE) current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 22. NVM reliability specifications
Symbol Description
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
t_nvmretp100 Data retention after up to 100 cycles
n_nvmcycp Cycling endurance
t_nvmretd10k Data retention after up to 10 K cycles
t_nvmretd1k Data retention after up to 1 K cycles
t_nvmretd100 Data retention after up to 100 cycles
n_nvmcycd Cycling endurance
Min.
Program Flash
5
10
15
10 K
Data Flash
5
10
15
10 K
Typ.¹
50
100
100
35 K
50
100
100
35 K
Max.
—
—
—
—
—
—
—
—
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 3, 2/2012.
Freescale Semiconductor, Inc.
Preliminary
Unit
years
years
years
cycles
years
years
years
cycles
Notes
2
2
2
3
2
2
2
3
35