MC9S12E64CPVE Datasheet, PDF (151/156 Pages) Freescale Semiconductor, Inc – MC9S12E-Family Device User Guide

Freescale Semicon_Dd_evu_icc_et_Uo_ser_r,_GI_un_idc_e._{— 9S12E128DGV1/D V01.04}
Table C-2 Expanded Bus Timing Characteristics (3.3V Range)
Conditions are VDDX=3.3V+/-10%, Junction Temperature -40°C to +140°C, C_LOAD = 50pF
Num C
Rating
Symbol Min
Typ
Max
1
P Frequency of operation (E-clock)
f_o
0
16.0
2
P Cycle time
3
D Pulse width, E low
t_cyc
PW_EL
62.5
30
4
D _{Pulse width, E high}¹
PW_EH
30
5
D Address delay time
t_AD
16
6
D Address valid time to E rise (PW_EL–t_AD)
t_AV
16
7
D Muxed address hold time
t_MAH
2
8
D Address hold to data valid
t_AHDS
7
9
D Data hold to address
t_DHA
2
10
D Read data setup time
t_DSR
15
11
D Read data hold time
t_DHR
0
12
D Write data delay time
t_DDW
15
13
D Write data hold time
t_DHW
2
14
D Write data setup time⁽¹⁾ (PW_EH–t_DDW)
t_DSW
15
15
D Address access time⁽¹⁾ (t_cyc–t_AD–t_DSR)
t_ACCA
29
16
D E high access time⁽¹⁾ (PW_EH–t_DSR)
t_ACCE
15
17
D Non-multiplexed address delay time
t_NAD
18
D Non-muxed address valid to E rise (PW_EL–t_NAD)
t_NAV
19
D Non-multiplexed address hold time
t_NAH
20
D Chip select delay time
t_CSD
21
D Chip select access time⁽¹⁾ (t_cyc–t_CSD–t_DSR)
t_ACCS
22
D Chip select hold time
t_CSH
23
D Chip select negated time
t_CSN
24
D Read/write delay time
t_RWD
14
25
D Read/write valid time to E rise (PW_EL–t_RWD)
t_RWV
16
26
D Read/write hold time
t_RWH
2
27
D Low strobe delay time
t_LSD
14
28
D Low strobe valid time to E rise (PW_EL–t_LSD)
t_LSV
16
29
D Low strobe hold time
t_LSH
2
30
D NOACC strobe delay time
t_NOD
14
31
D NOACC valid time to E rise (PW_EL–t_NOD)
t_NOV
16
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
151
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