MC9S12E64CPVE Datasheet, PDF (130/156 Pages) Freescale Semiconductor, Inc – MC9S12E-Family Device User Guide

Device User Guide — 9S12E12^F8^rD^eG^eV1^s/D^cV^a0^l1^e.04^{Semiconductor, Inc.}
B.5.1.4 Mass Erase
Erasing a NVM block takes:
t_mass
≈
20000
⋅
----------1-----------
f_NVMOP
The setup times can be ignored for this operation.
B.5.1.5 Blank Check
The time it takes to perform a blank check on the Flash is dependant on the location of the first non-blank
word starting at relative address zero. It takes one bus cycle per word to verify plus a setup of the
command.
t_check ≈ location ⋅ t_cyc + 10 ⋅ t_cyc
Table B-5 NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min Typ Max Unit
1
D External Oscillator Clock
f_NVMOSC
0.5
50¹
MHz
2
D Bus frequency for Programming or Erase Operations f_NVMBUS
1
MHz
3
D Operating Frequency
f_NVMOP
150
200
kHz
4
P Single Word Programming Time
t_swpgm
46²
74.5³
µs
5
D Flash Burst Programming consecutive word
t_bwpgm
20.4²
31³
µs
6
D Flash Burst Programming Time for 32 Words
t_brpgm
678.4²
1035.5^{3 µs}
7
P Sector Erase Time
t_era
20⁴
26.7³
ms
8
P Mass Erase Time
t_mass
100⁴
133³
ms
9
D Blank Check Time Flash per block
t _check
11⁵
32778^{6 t}cyc
NOTES:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f _NVMOP and maximum bus frequen-
cy f_bus.
3. Maximum Erase and Programming times are achieved under particular combinations of f _NVMOP and bus frequency f bus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. Minimum Erase times are achieved under maximum NVM operating frequency f _NVMOP.
5. Minimum time, if first word in the array is not blank
6. Maximum time to complete check on an erased block.
B.5.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
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