908E621_12 Datasheet, PDF (13/60 Pages) Freescale Semiconductor, Inc – Integrated Quad Half bridge and Triple High Side Embedded MCU and LIN for High End Mirror

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V_SUP ≤ 16 V, -40 °C ≤ T_J ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T_A = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HALL-EFFECT SENSOR INPUT H0 - GENERAL PURPOSE INPUT MODE (H0MS = 0)
Input Voltage Low Threshold
V_LT
Input Voltage High Threshold
V_HT
Input Voltage Hysteresis
V_HH
Pull-up resistor
R_PH
HALL-EFFECT SENSOR INPUT H0 - 2PIN HALL SENSOR INPUT MODE (H0MS = 1)
–
–
1.5
V
3.5
–
–
V
100
–
500
mV
7.0
10
13
kΩ
Output Voltage
V_SUP < 17 V
V_SUP >17 V
Output Drop @ I_OUT = 15 mA
V_HALL1
V_HALL2
V_H0D
V
–
V_SUP-1.2
–
–
–
15.8
–
–
2.5
V
Sense Current Threshold
Sense Current Hysteresis
Sense Current Limitation
ANALOG INPUT A0, A0CST
I_HSCT
6.0
I_HSCH
650
V_HSCLIM
20
7.9
10
mA
–
1650
µA
40
70
mA
Current Source A0, A0CST^{(25), (26)}
CSSEL1:0 = 00
CSSEL1:0 = 01
CSSEL1:0 = 10
CSSEL1:0 = 11
WAKE-UP INPUT L0
I_CS1
I_CS2
I_CS3
I_CS4
µA
–
40
–
–
120
–
–
320
–
–
800
–
Input Voltage Threshold Low
Input Voltage Threshold High
Input Voltage Hysteresis
Input Current
Wake-up Filter Time⁽²⁷⁾
V_LT
V_HT
V_LH
I_N
t_WUP
–
–
3.5
–
0.5
–
-10
–
–
20
1.5
V
–
V
–
V
10
µA
–
µs
Notes
25. This parameter is guaranteed only if correct trimming was applied
26. The current values are optimized to read a NTC temperature sensor, e.g. EPCOS type B57861 (R25 = 3000Ω, R/T characteristic 8016)
27. This parameter is guaranteed by process monitoring but is not production tested.
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
13