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908E621_12 Datasheet, PDF (12/60 Pages) Freescale Semiconductor, Inc – Integrated Quad Half bridge and Triple High Side Embedded MCU and LIN for High End Mirror
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
RDS(ON)-HB34
–
–
mΩ
275
325
275
325
Over-current Shutdown
High Side
Low Side
IHBOC34
A
4.8
–
7.2
4.8
–
7.2
Over-current Shutdown blanking time(21)
tOCB
–
4-8
–
μs
Switching Frequency(21)
fPWM
–
–
25
kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
VHSF
–
VLSF
–
Leakage Current
ILEAKHB
–
Low Side Current to Voltage Ratio(22)
CRRATIOHB34
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500 mA)
3.5
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2.0 A)
0.7
0.9
0.9
<0.2
5.0
1.0
V
–
–
10
µA
V/A
6.5
1.3
SWITCHABLE VDD OUTPUT HVDD
Over-current Shutdown
Over-current Shutdown Blanking Time(23)
HVDDT1:0 = 00
HVDDT1:0 = 01
HVDDT1:0 = 10
HVDDT1:0 = 11
IHVDDOC
25
35
50
mA
tHVDDOCB
µs
–
950
–
–
536
–
–
234
–
–
78
–
Over-current Flag Delay(23)
tHVDDOCFD
–
0.5
–
ms
Dropout Voltage @ ILOAD = 20 mA
VSUP DOWN SCALER(24)
Voltage Ratio (RATIO VSUP = VSUP / VADOUT)
INTERNAL DIE TEMPERATURE SENSOR(24)
VHVDDDROP
–
110
300
mV
RATIOVSUP
4.75
5.0
5.25
–
Voltage / Temperature Slope(23)
STTOV
–
26
–
mV/°C
Output Voltage @25°C
VT25
1.7
1.9
2.1
V
Notes
21. This parameter is guaranteed by process monitoring but is not production tested.
22. This parameter is guaranteed only if correct trimming was applied
23. This parameter is guaranteed by process monitoring but is not production tested.
24. This parameter is guaranteed only if correct trimming was applied
908E621
12
Analog Integrated Circuit Device Data
Freescale Semiconductor
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