908E621_12 Datasheet, PDF (11/60 Pages) Freescale Semiconductor, Inc – Integrated Quad Half bridge and Triple High Side Embedded MCU and LIN for High End Mirror

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V_SUP ≤ 16 V, -40 °C ≤ T_J ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T_A = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HIGH SIDE OUTPUTS HS2 AND HS3⁽¹⁸⁾
Switch On Resistance
T_J = 25 °C, I_LOAD = 1.0 A
Over-current Shutdown
Over-current Shutdown blanking time⁽¹⁶⁾
Current to Voltage Ratio⁽¹⁷⁾
V_ADOUT [V] / I_HS [A], (measured and trimmed I_HS = 2.0 A)
R_DS(ON)-HS23
I_HSOC23
t_OCB
CR_RATIOHS23
–
3.6
–
1.16
440
–
4-8
1.66
mΩ
500
5.6
A
–
µs
2.16
V/A
High Side Switching Frequency⁽¹⁶⁾
f_PWMHS
–
–
25
kHz
High Side Freewheeling Diode Forward Voltage
T_J = 25 °C, I_LOAD = 1.0 A
V_HSF
–
0.9
–
V
Leakage Current
HALF-BRIDGE OUTPUTS HB1 AND HB2
I_LEAKHS
–
<0.2
10
µA
Switch On Resistance
High Side, T_J = 25°C, I_LOAD = 1.0A
Low Side, T_J = 25°C, I_LOAD = 1.0A
R_DS(ON)-HB12
–
–
mΩ
750
900
750
900
Over-current Shutdown
High Side
Low Side
I_HBOC12
A
1.0
–
1.5
1.0
–
1.5
Over-current Shutdown blanking time⁽¹⁹⁾
t_OCB
–
4-8
–
μs
Switching Frequency⁽¹⁹⁾
f_PWM
–
–
25
kHz
Freewheeling Diode Forward Voltage
High Side, T_J = 25 °C, I_LOAD = 1.0 A
Low Side, T_J = 25 °C, I_LOAD = 1.0 A
Leakage Current
Low Side Current to Voltage Ratio⁽²⁰⁾
V_ADOUT [V] / I_HB [A], CSA = 1, (measured and trimmed I_HB = 200 mA)
V_ADOUT [V] / I_HB [A], CSA = 0, (measured and trimmed I_HB = 500 mA)
V_HSF
V_LSF
I_LEAKHB
CR_RATIOHB12
–
–
–
17.5
3.5
0.9
0.9
<0.2
25.0
5.0
V
–
–
10
µA
V/A
32.5
6.5
Notes
16. This parameter is guaranteed by process monitoring but is not production tested.
17. This parameter is guaranteed only if correct trimming was applied.
18. The high side HS3 can be only used for resistive loads.
19. This parameter is guaranteed by process monitoring but is not production tested.
20. This parameter is guaranteed only if correct trimming was applied
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
11