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M13S32321A_08 Datasheet, PDF (5/50 Pages) Elite Semiconductor Memory Technology Inc. – 256K x 32 Bit x 4 Banks Double Data Rate SDRAM
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ESMT
DC Specifications
M13S32321A
Parameter
Symbol
Test Condition
Operation Current
(One Bank Active)
IDD0
Operation Current
(One Bank Active)
IDD1
Precharge Power-down Standby
Current
IDD2P
tRC = tRC (min) tCK = tCK (min)
Active – Precharge
Burst Length = 2 tRC = tRC (min), CL= 3
IOUT = 0mA, Active-Read- Precharge
CKE ≤ VIL(max), tCK = tCK (min), All
banks idle
Idle Standby Current
IDD2N
Active Power-down
Current
Standby IDD3P
Active Standby Current
IDD3N
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
IDD4R
IDD4W
IDD5
IDD6
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
tCK (min)
All banks ACT, CKE ≤ VIL(max), tCK =
tCK (min)
One bank; Active-Precharge, tRC =
tRAS(max),
tCK = tCK (min)
Burst Length = 2, CL= 3 , tCK = tCK
(min), IOUT = 0mA
Burst Length = 2, CL= 3 , tCK = tCK
(min)
tRC ≥ tRFC(min)
CKE ≤ 0.2V
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
Version
-5
-6
120
100
175
150
20
20
70
60
20
20
90
80
260
220
210
180
190
160
3
3
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA 1
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Symbol
VIH(AC)
VIL(AC)
VID(AC)
Min
VREF + 0.45
0.7
Max
VREF - 0.45
VDDQ+0.6
Unit
V
V
V
Note
1
Input Crossing Point Voltage, CLK and CLK inputs
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
2
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(VDD = 2.375V~2.625V, VDDQ =2.375V~2.625V, TA = 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A9, BA0~BA1, CKE, CS , RAS , CAS , WE )
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
CIN1
CIN2
COUT
CIN3
Min
Max
Unit
2
3
pF
2
3
pF
4.0
5
pF
4.0
5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1
5/50
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