M13S32321A_08 Datasheet, PDF (14/50 Pages) Elite Semiconductor Memory Technology Inc. – 256K x 32 Bit x 4 Banks Double Data Rate SDRAM

ESMT
M13S32321A
Precharge
The precharge command is used to precharge or close a bank that has activated. The precharge command is issued when CS ,
RAS and WE are low and CAS is high at the rising edge of the clock. The precharge command can be used to precharge
each bank respectively or all banks simultaneously. The bank select addresses (BA0, BA1) are used to define which bank is
precharged when the command is initiated. For write cycle, t_WR(min.) must be satisfied until the precharge command can be issued.
After t_RP from the precharge, an active command to the same bank can be initiated.
A8/AP
0
0
0
0
1
Burst Selection for Precharge by Bank address bits
BA1
BA0
Precharge
0
0
Bank A Only
0
1
Bank B Only
1
0
Bank C Only
1
1
Bank D Only
X
X
All Banks
NOP & Device Deselect
The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore all the control inputs.
The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS , CAS and WE . For both Deselect and
NOP the device should finish the current operation when this command is issued.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1
14/50