English
Language : 

EN27LN2G08 Datasheet, PDF (9/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
◁
EN27LN2G08
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to +4.6
-0.6 to +4.6
-0.6 to VCC + 0.3 (< 4.6)
-40 to +125
-65 to +150
5
Unit
V
℃
℃
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, TA = 0 to 70°C or – 40°C to 85°C)
Parameter
Symbol
Min.
Supply Voltage
Supply Voltage
VCC
2.7
VSS
0
Typ.
3.3
0
Max.
Unit
3.6
V
0
V
DC AND OPERATION CHARACTERISTICS
(Recommended operating conditions otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
Operating
Current
Sequential Read
Program
ICC1
tRC=25ns, CE# =VIL, IOUT=0mA
ICC2
-
-
-
Erase
ICC3
-
-
15
30
15
30
mA
15
30
Stand-by Current (TTL)
ISB1
CE# =VIH, WP# =0V/VCC
-
-
1
mA
Stand-by Current (CMOS)
ISB2
CE# = VCC -0.2, WP# =0V/ VCC
-
10
50
uA
Input Leakage Current
ILI
VIN=0 to VCC (max)
-
-
±10
uA
Output Leakage Current
ILO
VOUT=0 to VCC (max)
-
-
±10
uA
Input High Voltage
Input Low Voltage, All inputs
VIH (1)
-
VIL (1)
-
0.8 x VCC
-
VCC +0.3 V
-0.3
-
0.2 x VCC V
Output High Voltage Level
VOH
IOH=-400uA
2.4
-
-
V
Output Low Voltage Level
VOL
IOL=2.1mA
-
-
0.4
V
Output Low Current (R/B#)
IOL (R /B#) VOL=0.4V
8
10
-
mA
Note:
1. VIL can undershoot to -0.4V and VIH can overshoot to VCC+0.4V for durations of 20ns or less.
2. Typical value are measured at VCC =3.3V, TA = 25℃. And not 100% tested.
This Data Sheet may be revised by subsequent versions
9
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13
 ▷