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EN27LN2G08 Datasheet, PDF (21/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
Serial access Cycle after Read (EDO Type CLE = L, ALE = L, WE# = H)
EN27LN2G08
Note:
1. Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
2. tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
Status Read Cycle
This Data Sheet may be revised by subsequent versions
21
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13