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| EN27LN2G08 Datasheet, PDF (52/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory | |||
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EN27LN2G08
Write Protect Operation
Enable WP# during erase and program busy is prohibited. The erase and program operations are
enabled and disable as follows.
Program enable mode:
Note: WP# keeps âHighâ until programming finish
Program disable mode:
This Data Sheet may be revised by subsequent versions
52
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13
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