EN27LN2G08 Datasheet, PDF (42/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory

EN27LN2G08
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register,
followed by an address input of 00h. Four read cycles sequentially output the manufacturer code (C8h),
and the device code and 3^rd, 4^th, 5^th cycle ID respectively. The command register remains in Read ID
mode until further commands are issued to it.
Read ID Operation
ID Definition Table
ID Access command = 90h
1^st Cycle
2^nd Cycle
Maker Code Device Code
C8h
Dah
3^rd Cycle
90h
4^th Cycle
95h
5^th Cycle
44h
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
5^th Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously
Programmed Pages, Etc.
Page Size, Block Size, Redundant Area Size, Organization,
Serial Access Minimum
Plane Number, Plane Size
This Data Sheet may be revised by subsequent versions
42
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13