EN27LN2G08 Datasheet, PDF (36/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory

EN27LN2G08
Page Program
The device is programmed based on the unit of a page, and consecutive partial page programming on
one page without intervening erase operation is strictly prohibited. Addressing of page program
operations within a block should be in sequential order. A complete page program cycle consists of a
serial data input cycle in which up to 2,112byte (1,056word) of data can be loaded into data register via
cache register, followed by a programming period during which the loaded data are programmed into
the designated memory cells.
The serial data input cycle begins with the Serial Data Input command (80h), followed by a five-cycle
address input and then serial data loading. The bytes not to be programmed on the page do not need to
be loaded. The column address for the next data can be changed to the address follows Random Data
Input command (85h). Random Data Input command may be repeated multiple times in a page. The
Page Program Confirm command (10h) starts the programming process. Writing 10h alone without
entering data will not initiate the programming process. The internal write engine automatically executes
the corresponding algorithm and controls timing for programming and verification, thereby freeing the
host controller for other tasks. Once the program process starts, the host controller can detect the
completion of a program cycle by monitoring the R/B# output or reading the Status bit (I/O6) using the
Read Status command. Only Read Status and Reset commands are valid during programming. When
the Page Program operation is completed, the host controller can check the Status bit (I/O0) to see if
the Page Program operation is successfully done. The command register remains the Read Status
mode unless another valid command is written to it.
A page program sequence is illustrated in following figure, where column address, page address, and
data input are placed in between 80h and 10h. After t_PROG program time, the R/B# de-asserts to ready
state. Read Status command (70h) can be issued right after 10h.
Program & Read Status Operation
Random Data Input In a page
This Data Sheet may be revised by subsequent versions
36
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13