EN27LN2G08 Datasheet, PDF (1/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory

EN27LN2G08
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
EN27LN2G08
Features
• Voltage Supply: 2.7V ~ 3.6V
• Organization
- Memory Cell Array :
(256M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
• Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
• Memory Cell: 1bit/Memory Cell
• Fast Write Cycle Time
- Page Program Time : 250µs (Typ.)
- Block Erase Time : 2ms (Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power
Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement: 4 bit/512 Byte
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
• Command Register Operation
• Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
• NOP: 4 cycles
• Cache Program Operation for High Performance
Program
• Cache Read Operation
• Copy-Back Operation
- EDO mode
- OTP Operation
- Two-Plane Operation
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13