EN27LN2G08 Datasheet, PDF (40/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory

EN27LN2G08
All pages in the OTP area will be protected simultaneously by issuing the Set Feature (EFh-90h-03h)
command to set the device to OTP protection mode. After the OTP area is protected, no page in the
area is programmable and the whole area cannot be unprotected.
The Read Status (70h) command is the only valid command for reading status in OTP operation mode.
Table 2. OTP Modes and Commands
OTP Operation mode
Read
Page Program
Set Feature
EFh-90h¹-01h²
EFh-90h-01h
OTP Protection mode
Program Protect
EFh-90h-03h
OTP Release mode
Leave OTP mode
Note:
1. 90h is OTP status register address.
2. 00h, 01h, and 03h are OTP status register data values.
EFh-90h-00h
Command
00h-30h
80h-10h
80h-10h
Table 3. OTP Area Details
Description
Number of OTP pages
OTP pages address
Number of partial page programs for each page in the OTP area
Value
30
00h – 1Dh
1
Read Status
A status register on the device is used to check whether program or erase operation is completed and
whether the operation is completed successfully. After writing 70h/F1h command to the command
register, a read cycle outputs the content of the status register to I/O pins on the falling edge of CE# or
RE#, whichever occurs last. These two commands allow the system to poll the progress of each device
in multiple memory connections even when R/B# pins are common-wired. RE# or CE# does not need to
toggle for status change.
The command register remains in Read Status mode unless other commands are issued to it. Therefore,
if the status register is read during a random read cycle, a read command (00h) is needed to start read
cycles.
This Data Sheet may be revised by subsequent versions
40
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13