EN27LN2G08 Datasheet, PDF (32/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory

ID Definition Table
ID Access command = 90h
Maker Code Device Code
C8h
Dah
3^rd Cycle
90h
4^th Cycle
95h
EN27LN2G08
5^th Cycle
44h
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
5^th Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously
Programmed Pages, Etc.
Page Size, Block Size, Redundant Area Size, Organization,
Serial Access Minimum
Plane Number, Plane Size
3^rd ID Data
Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
1
0
0
Internal Chip Number ²
4
0
1
1
0
8
1
1
2 Level Cell
0
0
Cell Type
4 Level Cell
8 Level Cell
0
1
1
0
16 Level Cell
1
1
Number of
Simultaneously
Programmed Page
1
2
4
8
0
0
0
1
1
0
1
1
Interleave Program Not Support
0
Between multiple
chips
Support
1
Cache Program
Not Support
0
Support
1
This Data Sheet may be revised by subsequent versions
32
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13