EN27LN2G08 Datasheet, PDF (12/56 Pages) Eon Silicon Solution Inc. – 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory

EN27LN2G08
AC Characteristics for Operation
Parameter
Symbol
Min.
Max.
Unit
Data Transfer from Cell to Register
t_R
-
ALE to RE# Delay
t_AR
10
CLE to RE# Delay
t_CLR
10
Ready to RE# Low
t_RR
20
RE# Pulse Width
t_RP
12
WE# High to Busy
t_WB
-
WP# Low to WE# Low (disable mode)
WP# High to WE# Low (enable mode)
t_WW
100
25
us
-
ns
-
ns
-
ns
-
ns
100
ns
-
ns
Read Cycle Time
t_RC
25
RE# Access Time
t_REA
-
CE# Access Time
t_CEA
-
RE# High to Output Hi-Z
t_RHZ
-
CE# High to Output Hi-Z
t_CHZ
-
CE# High to ALE or CLE Don’t Care
t_CSD
0
RE# High to Output Hold
t_RHOH
15
RE# Low to Output Hold
t_RLOH
5
CE# High to Output Hold
t_COH
15
RE# High Hold Time
t_REH
10
Output Hi-Z to RE# Low
t_IR
0
RE# High to WE# Low
t_RHW
100
WE# High to RE# Low
t_WHR
60
Read
-
-
ns
20
ns
25
ns
100
ns
30
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
5
us
Device Resetting
Program
-
Time during ...
Erase
t_RST
-
Ready
-
10
us
500
us
5⁽¹⁾
us
Cache Busy in Read Cache (following
31h and 3Fh)
t_DCBSYR
-
30
us
Note:
1. If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
This Data Sheet may be revised by subsequent versions
12
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. D, Issue Date: 2013/12/13