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| EN27LN51208 Datasheet, PDF (44/46 Pages) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory | |||
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EN27LN51208
11.13 Write Protect Operation
Enabling WP# during erase and program busy is prohibited. The erase and program operations are
enabled and disabled as follows:
Enable Programming:
Note: WP# keeps âHighâ until programming finish
Disable Programming:
Enable Erasing:
Note: WP# keeps âHighâ until erasing finish
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/09/30
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