EN27LN51208 Datasheet, PDF (12/46 Pages) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory

EN27LN51208
7.9 AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min.
Max.
Unit
CLE Setup Time
t_CLS ⁽¹⁾
12
-
ns
CLE Hold Time
CE# Setup Time
t_CLH
5
t_CS ⁽¹⁾
20
-
ns
-
ns
CE# Hold Time
t_CH
5
-
ns
WE# Pulse Width
ALE Setup Time
t_WP
12
t_ALS ⁽¹⁾
12
-
ns
-
ns
ALE Hold Time
Data Setup Time
t_ALH
5
t_DS ⁽¹⁾
12
-
ns
-
ns
Data Hold Time
t_DH
5
-
ns
Write Cycle Time
t_WC
25
-
ns
WE# High Hold Time
ALE to Data Loading Time
t_WH
t_ADL ⁽²⁾
10
100
-
ns
-
ns
Note:
1. The transition of the corresponding control pins must occur only once while WE# is held low.
2. t_ADL is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data
cycle.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/09/30