EN27LN51208 Datasheet, PDF(23/46 Page) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory

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EN27LN51208 Datasheet, PDF (23/46 Pages) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory

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EN27LN51208

9.5 Serial Access Cycle after Read (EDO Type CLE=L, WE#=H, ALE=L)

Figure 11. Sequential Out Cycle after Read (EDO Type CLE=L, WE#=H, ALE=L)

Note:

1. Transition is measured at Â±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested. (tCHZ, tRHZ)

2. tRLOH is valid when frequency is higher than 33MHz.

tRHOH starts to be valid when frequency is lower than 33MHz.

9.6 Status Read Cycle

Figure 12. Status Read Cycle

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2013/09/30

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