EN27LN51208 Datasheet, PDF (13/46 Pages) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory

7.10 AC Characteristics for Operation
EN27LN51208
Parameter
Symbol
Min.
Max.
Data Transfer from Cell to Register
t_R
-
25
ALE to RE# Delay
t_AR
10
-
CLE to RE# Delay
t_CLR
10
-
Ready to RE# Low
t_RR
20
-
RE# Pulse Width
t_RP
12
-
WE# High to Busy
t_WB
-
100
WP# Low to WE# Low (disable mode)
WP# High to WE# Low (enable mode)
t_WW
100
-
Read Cycle Time
t_RC
25
-
RE# Access Time
t_REA
-
20
CE# Access Time
t_CEA
-
25
RE# High to Output Hi-Z
t_RHZ
-
100
CE# High to Output Hi-Z
t_CHZ
-
30
CE# High to ALE or CLE Don’t Care
t_CSD
0
-
RE# High to Output Hold
t_RHOH
15
-
RE# Low to Output Hold
t_RLOH
5
-
CE# High to Output Hold
t_COH
15
-
RE# High Hold Time
t_REH
10
-
Output Hi-Z to RE# Low
t_IR
0
-
RE# High to WE# Low
t_RHW
100
-
WE# High to RE# Low
t_WHR
60
-
Read
-
5
Device Resetting
Program
-
10
Time during ...
Erase
t_RST
-
500
Ready
-
5 ⁽¹⁾
Cache Busy in Read Cache
(following 31h and 3Fh)
T_DCBSYR
-
30
Note:
If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Unit
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
us
us
us
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/09/30