EN27LN51208 Datasheet, PDF (1/46 Pages) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory

EN27LN51208
EN27LN51208
512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory
1. Features
• Voltage Supply: 3.3V (2.7V ~ 3.6V )
• Organization
x 8:
- Memory Cell Array :
(64M + 2M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
x 8:
- Page Program : (2K + 64) Byte
- Block Erase : (128K + 4K) Byte
• Page Read Operation
- Page Size : (2K + 64) Byte (x 8)
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
• Memory Cell: 1bit/Memory Cell
• Fast Write Cycle Time
- Page Program Time : 300µs (Typ.)
- Block Erase Time : 3ms (Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power
Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement: x 8 - 4bit/512 Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
• Command Register Operation
• Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
• NOP: 4 cycles
• Cache Program Operation for High Performance
Program
• Cache Read Operation
• Copy-Back Operation
• EOD mode
• OTP Operation
• Bad-Block-Protect
• Commercial temperature Range
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/09/30