EN27LN51208 Datasheet, PDF (30/46 Pages) Eon Silicon Solution Inc. – 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory

10. ID Definition Table
ID Access command = 90h
1^st Cycle
2^nd Cycle
(Maker Code) (Device Code)
C8h
D0h
3^rd Cycle
90h
4^th Cycle
95h
EN27LN51208
5^th Cycle
30h
6^th ~ 8^th Cycle
7Fh
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
5^th Byte
6^th Byte
7^th Byte
8^th Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, etc.
Page Size, Block Size, etc.
Plane Number, Plane Size
JEDEC Maker Code Continuation Code, 7Fh
JEDEC Maker Code Continuation Code, 7Fh
JEDEC Maker Code Continuation Code, 7Fh
rd
3 ID Data
Item
Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
1
0
0
Internal Chip Number ²
4
0
1
1
0
8
1
1
2 Level Cell
0
0
Cell Type
4 Level Cell
8 Level Cell
0
1
1
0
16 Level Cell
1
1
Reserved
Reserved
0
1
Interleave Program Not Support
0
Between multiple
chips
Support
1
Cache Program
Not Support
0
Support
1
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/09/30