W632GG8KB Datasheet, PDF (9/159 Pages) Winbond – 32M X 8 BANKS X 8 BIT DDR3 SDRAM

W632GG8KB
6. BALL DESCRIPTION
BALL NUMBER SYMBOL
F7, G7
CK, CK#
G9
CKE
H2
CS#
G1
ODT
F3, G3, H3
RAS#, CAS#,
WE#
B7
DM
J2, K8, J3
BA0−BA2
K3, L7, L3, K2, L8,
L2, M8, M2, N8, M3,
H7, M7, K7, N3, N7
A0−A14
H7
A10/AP
K7
A12/BC#
N2
RESET#
TYPE
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
DESCRIPTION
Clock: CK and CK# are differential clock inputs. All address and
control input signals are sampled on the crossing of the positive edge
of CK and negative edge of CK#.
Clock Enable: CKE HIGH activates, and CKE Low deactivates,
internal clock signals and device input buffers and output drivers.
Taking CKE Low provides Precharge Power Down and Self-Refresh
operation (all banks idle), or Active Power Down (row Active in any
bank). CKE is asynchronous for Self-Refresh exit. After VREFCA and
VREFDQ have become stable during the power on and initialization
sequence, they must be maintained during all operations (including
Self-Refresh). CKE must be maintained high throughout read and
write accesses. Input buffers, excluding CK, CK#, ODT and CKE, are
disabled during power down. Input buffers, excluding CKE, are
disabled during Self-Refresh.
Chip Select: All commands are masked when CS# is registered HIGH.
CS# provides for external Rank selection on systems with multiple
Ranks. CS# is considered part of the command code.
On Die Termination: ODT (registered HIGH) enables termination
resistance internal to the DDR3 SDRAM. When enabled, ODT is
applied to each DQ, DQS, DQS# and DM/TDQS, NU/TDQS# (When
TDQS is enabled via Mode Register A11=1 in MR1) signal. The ODT
signal will be ignored if Mode Registers MR1 and MR2 are
programmed to disable ODT and during Self Refresh.
Command Inputs: RAS#, CAS# and WE# (along with CS#) define the
command being entered.
Input Data Mask: DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH coincident with that input data
during a Write access. DM is sampled on both edges of DQS. The
function of DM or TDQS/TDQS# is enabled by Mode Register A11
setting in MR1.
Bank Address Inputs: BA0−BA2 define to which bank an Active, Read,
Write, or Precharge command is being applied. Bank address also
determines which mode register is to be accessed during a MRS
cycle.
Address Inputs: Provide the row address for Active commands and the
column address for Read/Write commands to select one location out
of the memory array in the respective bank. (A10/AP and A12/BC#
have additional functions; see below). The address inputs also provide
the op-code during Mode Register Set command.
Row address: A0−A14.
Column address: A0−A9.
Auto-precharge: A10 is sampled during Read/Write commands to
determine whether Auto-precharge should be performed to the
accessed bank after the Read/Write operation.
(HIGH: Auto-precharge; LOW: no Auto-precharge). A10 is sampled
during a Precharge command to determine whether the Precharge
applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one
bank is to be precharged, the bank is selected by bank addresses.
Burst Chop: A12/BC# is sampled during Read and Write commands to
determine if burst chop (on-the-fly) will be performed.
(HIGH, no burst chop; LOW: burst chopped). See section 9.1
“Command Truth Table” on page 94 for details.
Active Low Asynchronous Reset: Reset is active when RESET# is
LOW, and inactive when RESET# is HIGH. RESET# must be HIGH
during normal operation. RESET# is a CMOS rai to rail signal with DC
high and low at 80% and 20% of VDD, RESET# active is destructive to
data contents.
Publication Release Date: Jul. 28, 2014
Revision: A04
-9-