W3H32M72E-XSBX Datasheet, PDF (4/30 Pages) White Electronic Designs Corporation – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package

White Electronic Designs
W3H32M72E-XSBX
PRELIMINARY*
Symbol
ODT
CK, CK#
CKE
CS#
RAS#, CAS#,
WE#
LDM, UDM
BA0–BA1
TABLE 1 – BALL DESCRIPTIONS
Type
Description
On-Die termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When
Input
enabled, ODT is only applied to each of the following balls: DQ0–DQ71, LDM, UDM, LDQS, LDQS#, UDQS, and
UDQS#. The ODT input will be ignored if disabled via the LOAD MODE command.
Clock: CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing
Input
of the positive edge of CK and negative edge of CK#. Output data (DQS and DQS/DQS#) is referenced to the
crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking circuitry on the
DDR2 SDRAM. The specific circuitry that is enabled/disabled is dependent on the DDR2 SDRAM configuration
and operating mode. CKE LOW provides PRECHARGE power-down mode and SELF-REFRESH action (all banks
idle), or ACTIVE power-down (row active in any bank). CKE is synchronous for power-down entry, Power-down
Input
exit, output disable, and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding
CKE, and ODT) are disabled during power-down. Input buffers (excluding CKE) are disabled during self refresh.
CKE is an SSTL_18 input but will detect a LVCMO SLOW level once VCC is applied during first power-up. After
VREF has become stable during the power on and initialization sequence, it must be maintained for proper
operation of the CKE receiver. For proper SELF-REFRESH operation, VREF must be maintained.
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands
are masked when CS# is registered HIGH.
Input
Command inputs: RAS#, CAS#, WE# (along with CS#) define the command being entered.
Input data mask: DM is an input mask signal for write data. Input data is masked when DM is concurrently sampled
Input
HIGH during a WRITE access. DM is sampled on both edges of DQS. Although DM balls are input-only, the DM
loading is designed to match that of DQ and DQS balls. LDM is DM for lower byte DQ0–DQ7 and UDM is DM for
upper byte DQ8–DQ15, of each of U0-U4
Bank address inputs: BA0–BA1 define to which bank an ACTIVE, READ, WRITE, or PRECHARGE command is
Input
being applied. BA0–BA1 define which mode register including MR, EMR, EMR(2), and EMR(3) is loaded during the
LOAD MODE command.
Continued on next page
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February 2006
Rev. 2
4
White Electronic Designs Corporation • [phone] • www.wedc.com