CC430F5125 Datasheet, PDF (85/118 Pages) Texas Instruments – MSP430 SoC With RF Core

www.ti.com
ECCN 5E002 TSPA - Technology / Software Publicly Available
CC430F614x
CC430F514x
CC430F512x
SLAS555A – NOVEMBER 2012 – REVISED FEBRUARY 2013
Table 49. Bill of Materials
COMPONENTS
C1,3,4,5,7,9,11,13,15
C8,10,12,14
C2,6,16,17,18
C19
C20
C21,22
R1
R2
L1,2
L3,4
L5
L6
L7
C23
C24
C25
C26
C27
C28
C29
FOR 315 MHz
Capacitors: 220 pF
0.033 µH
0.033 µH
dnp ⁽²⁾
0.033 µH
dnp ⁽²⁾
220 pF
6.8 pF
6.8 pF
220 pF
10 pF
220 pF
FOR 433 MHz
100 nF
10 µF
2 pF
470 nF
2.2 nF
27 pF
56 kΩ
47kΩ
0.016 µH
0.027 µH
0.047 µH
dnp ⁽²⁾
0.051 µH
2.7 pF
220 pF
3.9 pF
3.9 pF
220 pF
4.7 pF
220 pF
FOR 868, 915 MHz
0.012 µH
0.018 µH
0.015 µH
0.0022 µH
0.015 µH
1 pF
100 pF
1.5 pF
1.5 pF
1.5 pF
8.2 pF
1.5 pF
COMMENT
Decoupling capacitors
Decoupling capacitors
Decoupling capacitors
V_CORE capacitor
RST decoupling cap
(optimized for SBW)
Load capacitors for
26 MHz crystal⁽¹⁾
R_BIAS (±1% required)
RST pullup
(1) The load capacitance C_L seen by the crystal is C_L = 1/((1/C21)+(1/C22)) + C_parasitic. The parasitic capacitance C_parasitic includes pin
capacitance and PCB stray capacitance. It can be typically estimated to be approximately 2.5 pF.
(2) dnp = do not populate
Copyright © 2012–2013, Texas Instruments Incorporated
Submit Documentation Feedback
85