M36DR432A Datasheet, PDF (40/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
Table 33. SRAM Low V_CCS Data Retention Characteristics ^{(1, 2)}
(T_A = –40 to 85°C; V_DDS = 1.65V to 2.2V)
Symbol
Parameter
Test Condition
Min
I_DDDR
Supply Current (Data Retention)
V_DDS = 1.2V, E1S ≥ V_DDS – 0.2V,
E2S ≥ V_DDS – 0.2V or E2S ≤ 0.2V, f = 0
V_DR Supply Voltage (Data Retention) E1S ≥ V_DDS – 0.2V, E2S ≤ 0.2V, f = 0
1
t_CDR Chip Disable to Power Down
E1S ≥ V_CCS – 0.2V, E2S ≤ 0.2V, f = 0
0
t_R
Operation Recovery Time
t_RC
Note: 1. All other Inputs V_IH ≤ V_DD– 0.2V or V_IL ≤ 0.2V.
2. Sampled only. Not 100% tested.
Figure 23. SRAM Low V_DDS Data Retention AC Waveforms, E1S Controlled
Max Unit
10
µA
2.2
V
ns
ns
VDDS
1.65 V
1.2 V
VDR
E1S _VSSS
tCDR
DATA RETENTION MODE
tR
E1S ≥ VDDS – 0.2V
AI90224
Figure 24. SRAM Low V_DDS Data Retention AC Waveforms, E2S Controlled
VDDS
1.65 V
E2S
VDR
0.4 V
VSSS
DATA RETENTION MODE
tCDR
tR
E2S ≤ 0.2V
AI90225
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