M36DR432A Datasheet, PDF (28/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
Table 26. Flash Write AC Characteristics, Write Enable Controlled
(T_A = –40 to 85 °C; V_DDF = 1.65V to 2.2V
Flash
Symbol
Alt
Parameter
100
120
Min Max Min Max
t_AVAV
t_WC Address Valid to Next Address Valid
100
120
t_AVWL
t_AS Address Valid to Write Enable Low
0
0
t_DVWH
t_DS Input Valid to Write Enable High
50
50
t_ELWL
t_CS Chip Enable Low to Write Enable Low
0
0
t_GHWL
Output Enable High to Write Enable Low
0
0
t_PLQ7V
RPF Low to Reset Complete During Program/Erase
15
15
t_VDHEL
t_VCS V_CCF High to Chip Enable Low
50
50
t_WHDX
t_DH Write Enable High to Input Transition
0
0
t_WHEH
t_CH Write Enable High to Chip Enable High
0
0
t_WHGL
t_OEH Write Enable High to Output Enable Low
30
30
t_WHWL
t_WPH Write Enable High to Write Enable Low
30
30
t_WLAX
t_AH Write Enable Low to Address Transition
50
50
t_WLWH
t_WP Write Enable Low to Write Enable High
50
50
Unit
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
Figure 9. Flash Write AC Waveforms, WF Controlled
A0-A20
EF
GF
WF
DQ0-DQ15
tAVWL
tELWL
tGHWL
tAVAV
VALID
tWLAX
tWHEH
tWHGL
tWLWH
tDVWH
VALID
tWHWL
tWHDX
VDDF
tVDHEL
Note: 1. Address are latched on the falling edge of WF, Data is latched on the rising edge of WF.
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AI90210