M36DR432A Datasheet, PDF (29/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
Table 27. Flash Write AC Characteristics, Chip Enable Controlled
(T_A = –40 to 85 °C; V_DDF = 1.65V to 2.2V)
Flash
Symbol
Alt
Parameter
100
120
Min Max Min Max
t_AVAV
t_WC Address Valid to Next Address Valid
100
120
t_AVEL
t_AS Address Valid to Chip Enable Low
0
0
t_DVEH
t_DS Input Valid to Chip Enable High
50
50
t_EHDX
t_DH Chip Enable High to Input Transition
0
0
t_EHEL
t_CPH Chip Enable High to Chip Enable Low
30
30
t_EHGL
t_OEH Chip Enable High to Output Enable Low
30
30
t_EHWH
t_WH Chip Enable High to Write Enable High
0
0
t_ELAX
t_AH Chip Enable Low to Address Transition
50
50
t_ELEH
t_CP Chip Enable Low to Chip Enable High
50
50
t_GHEL
Output Enable High Chip Enable Low
0
0
t_PLQ7V
RPF Low to Reset Complete During Program/Erase
15
15
t_VDHWL
t_VCS V_CCF High to Write Enable Low
50
50
t_WLEL
t_WS Write Enable Low to Chip Enable Low
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
Figure 10. Flash Write AC Waveforms, EF Controlled
A0-A20
WF
GF
EF
DQ0-DQ15
tAVEL
tWLEL
tGHEL
tAVAV
VALID
tELAX
tEHWH
tEHGL
tELEH
tDVEH
VALID
tEHEL
tEHDX
VDDF
tVDHWL
Note: Address are latched on the falling edge of EF, Data is latched on the rising edge of EF.
AI90211
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