M36DR432A Datasheet, PDF (24/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
Table 24. DC Characteristics
(T_A = –40 to 85°C; V_DDF = V_DDS = 1.65V to 2.2V)
Symbol Parameter
Device
Test Condition
Min Typ Max Unit
I_LI
Input Leakage
Current
Flash &
SRAM
0V ≤ V_IN ≤ V_DD
±2
µA
I_LO
Output Leakage
Current
Flash &
SRAM
0V ≤ V_OUT ≤ V_DD
±10 µA
I_DDS
V_DD Standby
Current
I_DDD
Supply Current
(Reset)
Flash
SRAM
Flash
EF = V_DDF ± 0.2V
V_DDF = V_DD max
E1S ≥ V_DDS – 0.2V, E2S ≤ V_DDS – 0.2V,
V_IN ≥ V_DDS – 0.2V
or V_IN ≤ V_DDS – 0.2V, f=0
RPF = V_SSF ± 0.2V
15
50
µA
20
50
µA
2
10
µA
I_DD Supply Current
SRAM
I_IO = 0 mA, E1S = V_IL, E2S = WS = V_IH,
V_IN = V_IL or V_IH, V_DDS = V_DD max,
cycle time = 1µs
I_IO = 0 mA, E1S = V_IL, E2S = WS = V_IH,
V_IN = V_IL or V_IH, V_DDS = V_DD max,
min cycle time
10 mA
25 mA
I_DDR
Supply Current
(Read)
Flash
EF = V_IL, GF = V_IH, f = 5 MHz
10
20 mA
I_DDW
Supply Current
(Program)
Flash
Program in progress
10
20 mA
I_DDWD
Supply Current
(Dual Bank)
Flash
Program/Erase in progress in one bank
Read in the other bank
20
40 mA
I_DDE
Supply Current
(Erase)
Flash
Erase in progress
10
20 mA
I_DDES(1)
Supply Current
(Erase Suspend)
Flash
Erase Suspend in progress
50
µA
Supply Current
I_DDWS(1) ^(Program
Suspend)
Flash
Program Suspend in progress
50
µA
I_PPS
Program Current
(Standby)
I_PPR
Program Current
(Read)
Flash
Flash
V_PPF ≤ V_DDS
V_PPF = 12V ± 0.6V
V_PPF ≤ V_DDS
V_PPF = 12V ± 0.6V
0.2
5
µA
100 400 µA
0.2
5
µA
100 400 µA
I_PPW
Program Current
(Program)
Flash
V_PPF = 12V ± 0.6V
Program in progress
5
10 mA
I_PPE
Program Current
(Erase)
Flash
V_PPF = 12V ± 0.6V
Program in progress
5
10 mA
V_IL
Input Low Voltage
Flash &
SRAM
–0.5
0.4
V
V_IH
Input High
Voltage
Flash &
SRAM
1.4
V_DD +0.3 V
V_OL
Output Low
Voltage
V_OH
Output High
Voltage
Flash &
SRAM
Flash &
SRAM
V_DDF = V_DDS = V_DD min
I_OL = 100µA
V_DDF = V_DDS = V_DD min
I_OH = –100µA
V_DD –0.1
0.2
V
V
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