M36DR432A Datasheet, PDF (18/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
POWER CONSUMPTION
Power Down
The memory provides Reset/Power Down control
input RPF. The Power Down function can be acti-
vated only if the relevant Configuration Register bit
is set to '1'. In this case, when the RPF signal is
pulled at V_SS the supply current drops to typically
I_CC2 (see Table 24), the memory is deselected and
the outputs are in high impedance.If RPF is pulled
to V_SS during a Program or Erase operation, this
operation is aborted in t_PLQ7V and the memory
content is no longer valid (see Reset/Power Down
input description).
Power Up
The memory Command Interface is reset on Pow-
er Up to Read Array. Either EF or WF must be tied
to V_IH during Power Up to allow maximum security
and the possibility to write a command on the first
rising edge of WF.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the V_CCF rails decoupled with a 0.1µF capac-
itor close to the V_CCF and V_SS pins. The PCB trace
widths should be sufficient to carry the required
V_CCF program and erase currents.
18/46