M36DR432A Datasheet, PDF (4/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
Table 2. Absolute Maximum Ratings ⁽¹⁾
Symbol
Parameter
Value
Unit
T_A
Ambient Operating Temperature ⁽³⁾
–40 to 85
°C
T_BIAS
Temperature Under Bias
–40 to 125
°C
T_STG
Storage Temperature
–55 to 150
°C
V_IO ⁽²⁾
Input or Output Voltage
–0.2 to V_DD(4) + 0.3
V
V_DDF
Flash Chip Supply Voltage
–0.5 to 2.7
V
V_DDS
SRAM Chip Supply Voltage
–0.2 to 2.6
V
V_PPF
Program Voltage
–0.5 to 13.0
V
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
4. V_DD = V_DDS = V_DDF.
Figure 4. Functional Block Diagram
VDDF
VPPF
EF
GF
WF
RPF
WPF
A18-A20
A0-A17
Flash Memory
32 Mbit (x16)
VDDS
VSSF
DQ0-DQ15
E1S
E2S
GS
WS
UBS
LBS
4/46
SRAM
4 Mbit (x16)
VSSS
AI90205