M36DR432A Datasheet, PDF (21/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432A, M36DR432B
Table 21. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h _{Device Size = 2}ⁿ _{in number of bytes}
28h
0001h
Flash Device Interface Code description: Asynchronous x16
29h
0000h
2Ah
0000h
Maximum number of bytes in multi-byte program or page = 2ⁿ
2Bh
0000h
2Ch
0002h Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more con-
tiguous Erase Blocks of the same size. For example, a 128KB device (1Mb)
having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered
to have 5 Erase Block Regions. Even though two regions both contain 16KB
blocks, the fact that they are not contiguous means they are separate Erase
Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
M36DR432A M36DR432A Erase Block Region Information
2Dh
003Eh _{bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in}
2Eh
0000h
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
2Fh
0000h
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
30h
0001h _{Block Region:}
31h
0007h
e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
32h
0000h ^{Note: y = 0 value must be used with number of block regions of one as indicated}
by (x) = 0
33h
0020h
34h
0000h
M36DR432B M36DR432B
2Dh
0007h
2Eh
0000h
2Fh
0020h
30h
0000h
31h
003Eh
32h
0000h
33h
0000h
34h
0001h
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