K3S7V2000M-TC Datasheet, PDF (4/27 Pages) Samsung semiconductor – 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM

K3S7V2000M-TC
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Voltage on VDD Relative to Vss
VDD, VDDQ
-0.5
Voltage on Any Pin Relative to Vss
VIN, VOUT
-0.5
Operating Temperature
TA
0
Storage Temperature
TSTG
-55
Short circuit current
IOS
-
Power Dissipation
PD
-
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Synch. MROM
Max
4.6
VDD + 0.5≤4.6
70
125
50
1
Unit
V
V
°C
°C
mA
W
DC OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS, TA=0 to 70°C)
Parameter
Supply Voltage
Supply Voltage(Ground)
Symbol
Min
Typ
Max
VDD, VDDQ
3.0
3.3
3.6
VSS,VSSQ
0
0
0
Unit
V
V
DC CHARACTERISTICS
Parameter
Standby Current ( Note3)
Active Standby Current
Symbol
ICC3P
ICC3PS
ICC3N
Min
-
-
-
Max
150
150
50
Unit
uA
uA
mA
Test Condition
CKE≤VIL(Max), tCC=Min
CKE=0, tCC=Min
CS≥VIH(Min), tCC=Min,
All Outputs Open
Burst Mode Operating Current
Input Leakage Current
ICC4
-
IIL
-10
100
mA
tCC=Min, All Outputs Open
10
uA
0V≤VIN≤VDD + 0.3V
Pins not under test=0V
Output Leakage Current (Dout Disabled)
IOL
-10
10
uA
(0V≤VOUT≤VDD Max)
Q# in High-Z
Input High Voltage, All Inputs
VIH
2.0
VDD + 0.3
V
Input Low Voltage, All Inputs
VIL
-0.3
0.8
V
Output High Voltage Level (Logic 1)
VOH
2.4
-
V
Output Low Voltage Level (Logic 0)
VOL
-
0.4
V
(Note1)
(Note2)
IOH=-2mA
IOL=2mA
Note : 1. VIH(Max)=4.6V for pulse width≤10ns acceptable, pulse width measured at 50% of pulse amplitude.
2. VIL(Min)=-1.5V for pulse width≤10ns acceptable, pulse width measured at 50% of pulse amplitude.
3. The condition is the same as Self Refresh Mode of SDRAM, that is, in this case CS,RAS,CAS have to be set to Low, MR has to be set to High.