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RX110_16 Datasheet, PDF (94/108 Pages) Renesas Technology Corp – 32 MHz 32-bit RX MCUs, 50 DMIPS | |||
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RX110 Group
5. Electrical Characteristics
Table 5.46 ROM (Flash Memory for Code Storage) Characteristics (3)
Middle-speed operating mode Conditions: 1.8 V ⤠VCC ⤠3.6 V, 1.8 V ⤠AVCC0 ⤠3.6 V, VSS = AVSS0 = 0 V
Temperature range for the programming/erasure operation: Ta = â40 to +85°C
FCLK = 1 MHz
FCLK = 8 MHz
Item
Symbol
Unit
Min.
Typ. Max.
Min.
Typ.
Max.
Programming time
4-byte
tP4
â
143
1330
â
96.8
932
μs
Erasure time
1-Kbyte
tE1K
â
8.3
269
â
5.85
219
ms
Blank check time
128-Kbyte
tE128K
â
203
464
â
40
4-byte
tBC4
â
â
78
â
â
260
ms
50
μs
1-Kbyte
Erase operation forcible stop time
tBC1K
â
â
1.61
â
â
tSED
â
â
33.6
â
â
0.369
ms
25.6
μs
Start-up area switching setting time
tSAS
â
13.2
549
â
7.6
445
ms
Access window time
ROM mode transition wait time 1
ROM mode transition wait time 2
tAWS
â
13.2
549
â
7.6
tDIS
2
â
â
2
â
tMS
3
â
â
3
â
445
ms
â
μs
â
μs
Note:
Note:
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
R01DS0202EJ0120 Rev.1.20
Jul 29, 2016
Page 94 of 108
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