H8S2148 Datasheet, PDF (906/1177 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series

Section 26 Electrical Characteristics
26.4.6 Flash Memory Characteristics
Table 26.43 shows the flash memory characteristics.
Table 26.43 Flash Memory Characteristics (Programming/erasing operating range)
Conditions (5 V version): V_CC = 5.0 V ±10%, V_SS = 0 V, T_a = 0 to +75°C
(3 V version): V_CC = 3.0 V to 3.6V, V_SS = 0 V, T_a = 0 to +75°C
Item
Symbol Min Typ
Max Unit
Test
Condition
Programming time^{*1 *2 *4}
tP
—
10
200 ms/
32 bytes
Erase time^{*1 *3 *6}
tE
—
100
1200 ms/
block
Reprogramming count
N_WEC
Data retention time^*10
t_DRP
Programming Wait time after SWE-bit setting^*1 x
100^*8
10
10
10000^*9 —
—
—
—
—
Times
Years
µs
Wait time after PSU-bit setting^*1 y
50
—
—
µs
Wait time after P-bit setting^{*1 *4} z
150 —
200 µs
Wait time after P-bit clear^*1
α
Wait time after PSU-bit clear^*1 β
Wait time after PV-bit setting^*1 γ
Wait time after dummy write^*1
ε
Wait time after PV-bit clear^*1
η
10
—
10
—
4
—
2
—
4
—
—
µs
—
µs
—
µs
—
µs
—
µs
Maximum programming
count^{*1 *4 *5}
N
—
—
1000 Times z = 200 µs
Erase
Wait time after SWE-bit setting^*1 x
10
—
—
µs
Wait time after ESU-bit setting^*1 y
200 —
—
µs
Wait time after E-bit setting^{*1 *6} z
5
—
10
ms
Wait time after E-bit clear^*1
α
Wait time after ESU-bit clear^*1 β
Wait time after EV-bit setting^*1 γ
Wait time after dummy write^*1
ε
Wait time after EV-bit clear^*1
η
Maximum erase count^{*1 *6 *7}
N
10
—
10
—
20
—
2
—
5
—
—
—
—
µs
—
µs
—
µs
—
µs
—
µs
120 Times z = 10 ms
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total period for which the P-bit in FLMCR1
is set. It does not include the programming verification time.)
Rev. 4.00 Sep 27, 2006 page 862 of 1130
REJ09B0327-0400