COP8AME9 Datasheet, PDF (11/83 Pages) National Semiconductor (TI) – 8-Bit CMOS Flash Microcontroller with 8k Memory, Dual Op Amps, Virtual EEROM, Temperature Sensor,10-Bit A/D and Brownout Reset

8.0 Electrical Characteristics (Continued)
DC Electrical Characteristics (−40˚C ≤ T_A ≤ +85˚C) (Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Output Current Levels
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink Current per Pin
V_CC = 4.5V, V_OH = 3.8V
−10
V_CC = 4.5V, V_OH = 3.8V
−7
V_CC = 4.5V, V_OL = 1.0V
10
TRI-STATE Leakage
V_CC = 5.5V
Maximum Input Current without Latchup (Note 5)
−0.5
RAM Retention Voltage, V_R (in HALT Mode)
2.0
Input Capacitance
Voltage on G6 to force execution from Boot ROM G6 rise time must be
(Note 8)
slower than 100 ns
2 x V_CC
G6 Rise Time to force execution from Boot ROM
Input Current on G6 when Input > V_CC
Flash Endurance
V_IN = 11V, V_CC = 5.5V
100
500
100k
Flash Data Retention
25˚C
100
Max
Units
15
+0.5
±200
7
V_CC + 7
µA
mA
mA
mA
µA
mA
V
pF
V
nS
µA
cycles
years
AC Electrical Characteristics (−40˚C ≤ T_A ≤ +85˚C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Instruction Cycle Time (t_C)
Crystal/Resonator
4.5V ≤ V_CC ≤ 5.5V
0.5
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t_UWS)
20
MICROWIRE/PLUS Hold Time (t_UWH)
20
MICROWIRE/PLUS Output Propagation
Delay (t_UPD)
Input Pulse Width
Interrupt Input High Time
1
Interrupt Input Low Time
1
Timer 1 Input High Time
1
Timer 1 Input Low Time
1
Timer 2, 3 Input High Time (Note 6)
1
Timer 2, 3 Input Low Time (Note 6)
1
Output Pulse Width
Timer 2, 3 Output High Time
150
Timer 2, 3 Output Low Time
150
USART Bit Time when using External
CKX
6 CKI
periods
USART CKX Frequency when being
Driven by Internal Baud Rate Generator
Reset Pulse Width
0.5
Flash Memory Mass Erase Time
8
Flash Memory Page Erase Time
See Table 13, Typical
Flash Memory
1
Endurance
t_C = instruction cycle time.
Note 2: Maximum rate of voltage change must be < 0.5 V/ms.
Max
Units
DC
µs
2
MHz
ns
ns
150
ns
t_C
t_C
t_C
t_C
MCLK or t_C
MCLK or t_C
ns
ns
2
MHz
µs
ms
ms
11
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