MT40A256M16GE-062E Datasheet, PDF (341/365 Pages) Micron Technology – 4Gb: x4, x8, x16 DDR4 SDRAM

Table 157: Electrical Characteristics and AC Timing Parameters: DDR4-1600 through DDR4-2400 (Continued)
Parameter
DQ Low-Z time from CK_t, CK_c
DQ High-Z time from CK_t, CK_c
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge for 1^tCKpreamble
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge for 2^tCKpreamble
DQS_t, DQS_c differential input low pulse
width
DQS_t, DQS_c differential input high
pulse width
DQS_t, DQS_c falling edge setup to CK_t,
CK_c rising edge
DQS_t, DQS_c falling edge hold from
CK_t, CK_c rising edge
DQS_t, DQS_c differential WRITE pream-
ble for 1^tCKpreamble
DQS_t, DQS_c differential WRITE pream-
ble for 2^tCKpreamble
DQS_t, DQS_c differential WRITE postam-
ble
DQS_t, DQS_c rising edge output access
time from rising CK_t, CK_c
DQS_t, DQS_c rising edge output var-
iance window per DRAM
DQS_t, DQS_c differential output high
time
DQS_t, DQS_c differential output low
time
DQS_t, DQS_c Low-Z time (RL - 1)
DQS_t, DQS_c High-Z time (RL + BL/2)
Symbol
t_LZDQ
t_HZDQ
t_DQSS1ck
t_DQSS2ck
t_DQSL
DDR4-1600 DDR4-1866
Min Max Min Max
–450 225 –390 195
–
225
–
195
DQ Strobe Input Timing
–0.27 0.27 –0.27 0.27
DDR4-2133
Min Max
–360 180
–
180
–0.27 0.27
DDR4-2400
Min Max
–330 175
–
175
–0.27 0.27
Unit
ps
ps
Notes
CK
–0.50 0.50 –0.50 0.50 –0.50 0.50 –0.50 0.50 CK
0.46 0.54 0.46 0.54 0.46 0.54 0.46 0.54 CK
t_DQSH
0.46 0.54 0.46 0.54 0.46 0.54 0.46 0.54 CK
t_DSS
0.18
–
0.18
–
0.18
–
0.18
–
CK
t_DSH
0.18
–
0.18
–
0.18
–
0.18
–
CK
t_WPRE1ck
0.9
–
0.9
–
0.9
–
0.9
–
CK
t_WPRE2ck
1.8
–
1.8
–
1.8
–
1.8
–
CK
t_WPST
0.33
–
0.33
–
0.33
–
0.33
–
CK
DQS Strobe Output Timing (DLL enabled)
t_DQSCK
–225 225 –195 195 –180 180 –175 175
ps
t_DQSCKi
–
370
–
330
–
310
–
290
ps
t_QSH
0.4
–
0.4
–
0.4
–
0.4
–
CK
t_QSL
0.4
–
0.4
–
0.4
–
0.4
–
CK
t_LZDQS
t_HZDQS
–450 225 –390 195 –360 180 –330 175
ps
–
225
–
195
–
180
–
175
ps