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MT40A256M16GE-062E Datasheet, PDF (300/365 Pages) Micron Technology – 4Gb: x4, x8, x16 DDR4 SDRAM
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4Gb: x4, x8, x16 DDR4 SDRAM
Electrical Characteristics – On-Die Termination Characteristics
Figure 236: ODT Definition of Voltages and Currents
Chip in termination mode
ODT
VDDQ
To other
RTT
circuitry
like RCV,
...
IOUT
DQ
VOUT
VSSQ
Table 127: ODT DC Characteristics
RTT
240 ohm
120 ohm
80 ohm
60 ohm
48 ohm
40 ohm
34 ohm
DQ-to-DQ mismatch
within byte
VOUT
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOL(DC) = 0.5 × VDDQ
VOM(DC) = 0.8 × VDDQ
VOH(DC) = 1.1 × VDDQ
VOM(DC) = 0.8 × VDDQ
Min
0.9
0.9
0.8
0.9
0.9
0.8
0.9
0.9
0.8
0.9
0.9
0.8
0.9
0.9
0.8
0.9
0.9
0.8
0.9
0.9
0.8
0
Nom
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
–
Max
1.25
1.1
1.1
1.25
1.1
1.1
1.25
1.1
1.1
1.25
1.1
1.1
1.25
1.1
1.1
1.25
1.1
1.1
1.25
1.1
1.1
10
Unit
RZQ
RZQ
RZQ
RZQ/2
RZQ/2
RZQ/2
RZQ/3
RZQ/3
RZQ/3
RZQ/4
RZQ/4
RZQ/4
RZQ/5
RZQ/5
RZQ/5
RZQ/6
RZQ/6
RZQ/6
RZQ/7
RZQ/7
RZQ/7
%
Notes
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 4, 5, 6
Notes: 1. The tolerance limits are specified after calibration to 240 ohm ±1% resistor with stable
voltage and temperature. For the behavior of the tolerance limits if temperature or
voltage changes after calibration, see ODT Temperature and Voltage Sensitivity.
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
300
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