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| MT40A1G4HX-093E Datasheet, PDF (292/365 Pages) Micron Technology – 4Gb: x4, x8, x16 DDR4 SDRAM | |||
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4Gb: x4, x8, x16 DDR4 SDRAM
Electrical Characteristics â AC and DC Output Measurement
Levels
Figure 230: Reference Load For AC Timing and Output Slew Rate
CK_t, CK_c
VDDQ
DUT
VTT = VDDQ
DQ, DQS_t, DQS_c,
DM, TDQS_t, TDQS_c
RTT = 50È
VSSQ
Timing reference point
Connectivity Test Mode Output Levels
Table 119: Connectivity Test Mode Output Levels
Parameter
Symbol DDR4-1600 to DDR4-3200
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
DC output below measurement level (for IV curve linearity)
AC output high measurement level (for output slew rate)
AC output low measurement level (for output slew rate)
VOH(DC)
VOM(DC)
VOL(DC)
VOB(DC)
VOH(AC)
VOL(AC)
1.1 Ã VDDQ
0.8 Ã VDDQ
0.5 Ã VDDQ
0.2 Ã VDDQ
VTT + (0.1 Ã VDDQ)
VTT - (0.1 Ã VDDQ)
Note: 1. Driver impedance of RZQ/7 and an effective test load of 50Ω to VTT = VDDQ.
Unit
V
V
V
V
V
V
Figure 231: Connectivity Test Mode Reference Test Load
CT_Inputs
VDDQ
DUT
DQ, DQS_t, DQS_c,
DQSL_t, DQSL_c, DQSU_t, DQSU_c,
DM, DML, DMH, TDQS_t, TDQS_c
RTT = 50È
0.5 Ã VDDQ
VSSQ
Timing reference point
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
292
Micron Technology, Inc. reserves the right to change products or specifications without notice.
 2014 Micron Technology, Inc. All rights reserved.
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