PIC18F23K20 Datasheet, PDF (372/420 Pages) Microchip Technology – 28/40/44-Pin Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

PIC18F2XK20/4XK20
26.10 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +125°C
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications⁽¹⁾
D110 VPP Voltage on MCLR/VPP/RE3 pin 9.00
— 13.25 V (Note 3)
D113 IDDP Supply Current during
Programming
—
—
10 mA
Data EEPROM Memory
D120 ED Byte Endurance
— 100K — E/W -40°C to +125°C
D121 VDRW VDD for Read/Write
1.8
—
3.6
V Using EECON to read/write
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
1M 10M
— E/W -40°C to +125°C
D130 EP
Program Flash Memory
Cell Endurance
—
10K
— E/W -40°C to +125°C
D131 VPR VDD for Read
1.8
—
3.6
V
D132 VIW VDD for Row Erase or Write
1.8
—
3.6
V
D133 TIW Self-timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if single-supply programming is disabled.
DS41303B-page 370
Advance Information
© 2007 Microchip Technology Inc.