PIC18F2221_1 Datasheet, PDF (349/402 Pages) Microchip Technology – Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

PIC18F2221/2321/4221/4321 FAMILY
TABLE 27-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Data EEPROM Memory
D120 ED Byte Endurance
1M 10M
— E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON to read/write,
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽¹⁾
100K 1M
— E/W -40°C to +85°C
D125 IDDP Supply Current during
Programming
—
10
— mA
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
3.0
—
5.5
V Using ICSP™ port, 25°C
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
D135 IDDP Supply Current during
Programming
—
10
— mA
†
Note 1:
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Refer to Section 8.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
© 2009 Microchip Technology Inc.
DS39689F-page 349